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| IL1/ IL2/ IL5 Vishay Semiconductors Optocoupler, Phototransistor Output, With Base Connection Features * * * * Current Transfer Ratio (see order information) Isolation Test Voltage 5300 VRMS Lead-free component Component in accordance to RoHS 2002/95/EC and WEEE 2002/96/EC A C NC 1 2 3 6B 5C 4E Agency Approvals * UL1577, File No. E52744 System Code H or J, Double Protection i179004 e3 Pb Pb-free * DIN EN 60747-5-2 (VDE0884) DIN EN 60747-5-5 pending Available with Option 1 Order Information Part IL1 IL2 IL5 IL1-X006 IL2-X006 IL2-X009 IL5-X009 Remarks CTR > 20 %, DIP-6 CTR > 100 %, DIP-6 CTR > 50 %, DIP-6 CTR > 20 %, DIP-6 400 mil (option 6) CTR > 100 %, DIP-6 400 mil (option 6) CTR > 100 %, SMD-6 (option 9) CTR > 50 %, SMD-6 (option 9) Description The IL1/ IL2/ IL5 are optically coupled isolated pairs employing GaAs infrared LEDs and silicon NPN phototransistor. Signal information, including a DC level, can be transmitted by the drive while maintaining a high degree of electrical isolation between input and output. The IL1/ IL2/ IL5 are especially designed for driving medium-speed logic and can be used to eliminate troublesome ground loop and noise problems These couplers can be used also to replace relays and transformers in many digital interface applications such as CRT modulation. For additional information on the available options refer to Option Information. Absolute Maximum Ratings Tamb = 25 C, unless otherwise specified Stresses in excess of the absolute Maximum Ratings can cause permanent damage to the device. Functional operation of the device is not implied at these or any other conditions in excess of those given in the operational sections of this document. Exposure to absolute Maximum Rating for extended periods of the time can adversely affect reliability. Input Parameter Reverse voltage Forward current Surge current Power dissipation Derate linearly from 25 C Test condition Symbol VR IF IFSM Pdiss Value 6.0 60 2.5 100 1.33 Unit V mA A mW mW/C Document Number 83612 Rev. 1.5, 26-Oct-04 www.vishay.com 1 IL1/ IL2/ IL5 Vishay Semiconductors Output Parameter Collector-emitter breakdown voltage Test condition Part IL1 IL2 IL5 Emitter-base breakdown voltage Collector-base breakdown voltage Collector current t < 1.0 ms Power dissipation Derate linearly from 25 C Symbol BVCEO BVCEO BVCEO BVEBO BVCBO IC IC Pdiss Value 50 70 70 7.0 70 50 400 200 2.6 Unit V V V V V mA mA mW mW/C Coupler Parameter Package power dissipation Derate linearly from 25 C Isolation test voltage (between emitter and detector referred to standard climate 23 /50 %RH, DIN 50014) Creepage Clearance Comparative tracking index per DIN IEC 112/VDE 0303, part 1 Isolation resistance VIO = 500 V, Tamb = 25 C VIO = 500 V, Tamb = 100 C Storage temperature Operating temperature Junction temperature Soldering temperature 2.0 mm from case bottom RIO RIO Tstg Tamb Tj Tsld VISO Test condition Symbol Ptot Value 250 3.3 5300 Unit mW mW/C VRMS 7.0 7.0 175 1012 1011 - 40 to + 150 - 40 to + 100 100 260 mm mm C C C C Electrical Characteristics Tamb = 25 C, unless otherwise specified Minimum and maximum values are testing requirements. Typical values are characteristics of the device and are the result of engineering evaluation. Typical values are for information only and are not part of the testing requirements. Input Parameter Forward voltage Breakdown voltage Reverse current Capacitance Thermal resistance junction to lead Test condition IF = 60 mA IR = 10 A VR = 6.0 V VR = 0 V, f = 1.0 MHz Symbol VF VBR IR CO Rthjl 6.0 Min Typ. 1.25 30 0.01 40 750 10 Max 1.65 Unit V V A pF K/W www.vishay.com 2 Document Number 83612 Rev. 1.5, 26-Oct-04 IL1/ IL2/ IL5 Vishay Semiconductors Output Parameter Collector-emitter capacitance Collector - base capacitance Emitter - base capacitance Collector-emitter leakage current Collector-emitter saturation voltage Base-emitter voltage DC forward current gain DC forward current gain saturated Thermal resistance junction to lead Test condition VCE = 5.0 V, f = 1.0 MHz VCB = 5.0 V, f = 1.0 MHz VEB = 5.0 V, f = 1.0 MHz VCE = 10 V ICE = 1.0 mA, IB = 20 A VCE = 10 V, IB = 20 A VCE = 10 V, IB = 20 A VCE = 0.4 V, IB = 20 A Symbol CCE CCB CEB ICEO VCESAT VBE HFE HFEsat Rthjl 200 120 Min Typ. 6.8 8.5 11 5.0 0.25 0.65 650 400 500 1800 600 K/W 50 Max Unit pF pF pF nA V V Coupler Parameter Capacitance (input-output) Insulation resistance Test condition VI-O = 0 V, f = 1.0 MHz VI-O = 500 V Symbol CIO RS Min Typ. 0.6 1014 Max Unit pF Current Transfer Ratio Parameter Current Transfer Ratio (collector-emitter saturated) Test condition IF = 10 mA, VCE = 0.4 V Part IL1 IL2 IL5 Current Transfer Ratio (collector-emitter) IF = 10 mA, VCE = 10 V IL1 IL2 IL5 Current Transfer Ratio (collector-base) IF = 10 mA, VCB = 9.3 V IL1 IL2 IL5 Symbol CTRCEsat CTRCEsat CTRCEsat CTRCE CTRCE CTRCE CTRCB CTRCB CTRCB 20 100 50 Min Typ. 75 170 100 80 200 130 0.25 0.25 0.25 300 500 400 Max Unit % % % % % % % % % Switching Non-saturated Parameter Test condition Symbol Unit IL1 IL2 IL5 IF mA 20 4.0 10 tD s 0.8 1.7 1.7 Current Delay Rise time Storage Fall time Propagation H-L tPHL s 0.7 1.2 1.1 Propagation L-H tPLH s 1.4 2.3 2.5 VCE = 5.0 V, RL = 75 , tP measured at 50 % of output tr s 1.9 2.6 2.6 tS s 0.2 0.4 0.4 tf s 1.4 2.2 2.2 Document Number 83612 Rev. 1.5, 26-Oct-04 www.vishay.com 3 IL1/ IL2/ IL5 Vishay Semiconductors Switching Saturated Parameter Test condition Symbol Unit IL1 IL2 IL5 IF mA 20 5.0 10 tD s 0.8 1.0 1.7 Current Delay Rise time Storage Fall time Propagation H-L tPHL s 1.6 5.4 2.6 Propagation L-H tPLH s 8.6 7.4 7.2 VCE = 0.4 V, RL = 1.0 k, VCL = 5.0 V, VTH = 1.5 V tr s 1.2 2.0 7.0 tS s 7.4 5.4 4.6 tf s 7.6 13.5 20 Common Mode Transient Immunity Parameter Common mode rejection output high Common mode rejection output low Common mode coupling capacitance Test condition VCM = 50 VP-P, RL = 1 k, IF = 10 mA VCM = 50 VP-P, RL = 1 k, IF = 10 mA Symbol | CMH | | CML | CCM Min Typ. 5000 5000 0.01 Max Unit V/s V/s pF Typical Characteristics (Tamb = 25 C unless otherwise specified) VCC=5V F=10 KHz I F =10 mA F=10 KHz DF=50% VO R L=75 DF=50% VCC=5V RL VO I F =10 mA iil1_01 iil1_02 Figure 1. Non-saturated Switching Schematic Figure 2. Saturated Switching Schematic www.vishay.com 4 Document Number 83612 Rev. 1.5, 26-Oct-04 IL1/ IL2/ IL5 Vishay Semiconductors IF NCTR - Normalized CTR 1.5 Normalized to: VCE = 10 V, IF = 10 mA 1.0 CTRce(sat) VCE = 0.4 V tPHL VO tPLH tS 50% 0.5 NCTR(SAT) NCTR 0.0 .1 1 10 100 I F - LED Current - mA iil1_03 tD tR tF iil1_06 Figure 3. Non-saturated Switching Timing Figure 6. Normalized Non-Saturated and Saturated CTR vs. LED Current 1.5 IF NCTR - Normalized CTR Normalized to: VCE = 10 V, IF = 10 mA CTRce(sat) VCE = 0.4 V 1.0 TA= 50C tD VO tR tPLH VTH=1.5 V tPHL iil1_04 0.5 NCTR(SAT) NCTR 0.0 .1 1 10 100 I F - LED Current - mA tS tF iil1_07 Figure 4. Saturated Switching Timing Figure 7. Normalized Non-saturated and Saturated CTR vs. LED Current 1.4 V F - Forward Voltage - V 1.5 T A = -55C T A = 25C NCTR - Normalized CTR 1.3 1.2 1.1 1.0 0.9 0.8 0.7 .1 Normalized to: VCE = 10 V, IF = 10 mA 1.0 CTRce(sat) VCE = 0.4 V TA= 70C 0.5 NCTR(SAT) NCTR 0.0 .1 1 10 I F - LED Current - mA 100 T A = 100C 1 10 I F - Forward Current - mA 100 iil1_08 iil1_05 Figure 5. Forward Voltage vs. Forward Current Figure 8. Normalized Non-saturated and saturated CTR vs. LED Current Document Number 83612 Rev. 1.5, 26-Oct-04 www.vishay.com 5 IL1/ IL2/ IL5 Vishay Semiconductors 1.5 NCTRcb - Normalized CTRcb NCTR - Normalized CTR 1.5 Normalized to: VCE = 10 V, IF = 10 mA CTRce(sat) VCE = 0.4 V Normalized to: IF =10 mA 1.0 Vcb = 9.3 V 1.0 TA= 100C 0.5 NCTR(SAT) NCTR 0.0 .1 1 10 100 IF - LED Current - mA 0.5 25C 50C 70C 0.0 .1 iil1_12 1 10 100 iil1_09 IF - LED Current - mA Figure 9. Normalized Non-Saturated and Saturated CTR, TA = 100 C vs. LED Current Figure 12. Normalized CTRcb vs. LED Current and Temperature 35 Ice - Collector Current - mA 1000 100 50C 70C 100C 30 Icb - Collector Base Photocurrent - A 25 20 15 10 5 0 0 10 25C Icb = 1.0357 *IF ^1.3631 10 1 .1 .01 .1 20 30 40 50 60 iil1_13 iil1_10 IF - LED Current - mA 1 10 IF - LED Current - mA 100 Figure 10. Collector-Emitter Current vs. Temperature and LED Current Figure 13. Collector-Base Photocurrent vs. LED Current 10 5 I CEO - Collector-Emitter - nA 10 Normalized to: IF = 10 mA 1 10 4 10 3 10 2 10 1 10 0 10 -1 10 -2 -20 0 20 40 60 80 100 iil1_14 W orst Case V CE = 10 V Typical Normalized Photocurrent .1 NIB-TA=-20C NIB-TA= 25C NIB-TA= 50C NIB-TA= 70C .01 .1 1 10 100 T A - Ambient Temperature - C iil1_11 IF -LED Current- mA Figure 11. Collector-Emitter Leakage Current vs.Temp. Figure 14. Normalized Photocurrent vs. IF and Temp. www.vishay.com 6 Document Number 83612 Rev. 1.5, 26-Oct-04 IL1/ IL2/ IL5 Vishay Semiconductors 1.2 70C NHFE - Normalized HFE Normalized to: 50 Ib = 20A Vce = 10 V 1.0 25C -20C 0.8 0.6 0.4 1 iil1_15 10 100 1000 Ib - Base Current - A Figure 15. Normalized Non-saturated HFE vs. Base Current and Temperature 1.5 NHFE(sat) -Normalized Saturated HFE 70C 50C 25C -20C Normalized to: V CE = 10 V I B = 20 A 1.0 0.5 V CE = 0.4 V 0.0 1 10 100 1000 I B - Base Current - (A) iil1_16 Figure 16. Normalized Saturated HFE vs. Base Current and Temperature 1000 IF = 10 mA Vcc = 5 V, Vth = 1.5 V tp - Propagatio Delay s 2.5 tpHL - Propagation Delay s tpHL 100 2.0 10 tpLH 1 .1 1 10 100 RL - Collector Load Resistor - k 1.5 1.0 iil1_17 Figure 17. Propagation Delay vs. Collector Load Resistor Document Number 83612 Rev. 1.5, 26-Oct-04 www.vishay.com 7 IL1/ IL2/ IL5 Vishay Semiconductors Package Dimensions in Inches (mm) pin one ID 3 .248 (6.30) .256 (6.50) 4 2 1 5 6 ISO Method A .335 (8.50) .343 (8.70) .039 (1.00) Min. 4 typ. .018 (0.45) .022 (0.55) i178004 .048 (0.45) .022 (0.55) .130 (3.30) .150 (3.81) .300 (7.62) typ. 18 .031 (0.80) min. .031 (0.80) .035 (0.90) .100 (2.54) typ. 3-9 .010 (.25) typ. .300-.347 (7.62-8.81) .114 (2.90) .130 (3.0) Option 6 .407 (10.36) .391 (9.96) .307 (7.8) .291 (7.4) Option 9 .375 (9.53) .395 (10.03) .300 (7.62) ref. .0040 (.102) .0098 (.249) .020 (.51) .040 (1.02) .012 (.30) typ. 18493 .014 (0.35) .010 (0.25) .400 (10.16) .430 (10.92) .315 (8.00) min. 15 max. www.vishay.com 8 Document Number 83612 Rev. 1.5, 26-Oct-04 IL1/ IL2/ IL5 Vishay Semiconductors Ozone Depleting Substances Policy Statement It is the policy of Vishay Semiconductor GmbH to 1. Meet all present and future national and international statutory requirements. 2. Regularly and continuously improve the performance of our products, processes, distribution and operatingsystems with respect to their impact on the health and safety of our employees and the public, as well as their impact on the environment. It is particular concern to control or eliminate releases of those substances into the atmosphere which are known as ozone depleting substances (ODSs). The Montreal Protocol (1987) and its London Amendments (1990) intend to severely restrict the use of ODSs and forbid their use within the next ten years. Various national and international initiatives are pressing for an earlier ban on these substances. Vishay Semiconductor GmbH has been able to use its policy of continuous improvements to eliminate the use of ODSs listed in the following documents. 1. Annex A, B and list of transitional substances of the Montreal Protocol and the London Amendments respectively 2. Class I and II ozone depleting substances in the Clean Air Act Amendments of 1990 by the Environmental Protection Agency (EPA) in the USA 3. Council Decision 88/540/EEC and 91/690/EEC Annex A, B and C (transitional substances) respectively. Vishay Semiconductor GmbH can certify that our semiconductors are not manufactured with ozone depleting substances and do not contain such substances. We reserve the right to make changes to improve technical design and may do so without further notice. Parameters can vary in different applications. All operating parameters must be validated for each customer application by the customer. Should the buyer use Vishay Semiconductors products for any unintended or unauthorized application, the buyer shall indemnify Vishay Semiconductors against all claims, costs, damages, and expenses, arising out of, directly or indirectly, any claim of personal damage, injury or death associated with such unintended or unauthorized use. Vishay Semiconductor GmbH, P.O.B. 3535, D-74025 Heilbronn, Germany Telephone: 49 (0)7131 67 2831, Fax number: 49 (0)7131 67 2423 Document Number 83612 Rev. 1.5, 26-Oct-04 www.vishay.com 9 |
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